VISHAY SILICONIX » J105-E3
Details
| Part Number | J105-E3 |
|---|---|
| Manufacturer | VISHAY SILICONIX |
| Category | PRODUCTS-J |
| Price | Request Quote |
| Lead Time | Request Quote |
Description
JFET Transistor Polarity:N Channel Breakdown Voltage, V(br)gss:-25V Zero Gate Voltage Drain Current Min, Idss:500mA Gate-Source Cutoff Voltage Max, Vgs(off):-10V Package/Case:TO-226AA Continuous Drain Current, Id:500mA RoHS Compliant: Yes Simple Type: TBD
Related Products
VISHAY SILICONIX
MOSFET Transistor Polarity:P Channel Drain Source Voltage, Vds:-60V Continuous Drain Current, Id:-185mA On-Resistance, Rds(on):60ohm Rds(on) Test Voltage, Vgs:-10V Package/Case:SOT-23 Drain-Source Breakdown Voltage:60V RoHS Compliant: Yes Simple Type: TBD
VISHAY SILICONIX
MOSFET Transistor Polarity:P Channel Drain Source Voltage, Vds:-30V Continuous Drain Current, Id:-385mA On-Resistance, Rds(on):1.4ohm Rds(on) Test Voltage, Vgs:-10V Package/Case:TO-236 Drain Source On Resistance @ 10V:1.4ohm RoHS Compliant: Yes Simple Type: TBD
VISHAY SILICONIX
MOSFET Transistor Polarity:P Channel Drain Source Voltage, Vds:-20V Continuous Drain Current, Id:-580mA On-Resistance, Rds(on):650mohm Rds(on) Test Voltage, Vgs:-4.5V Package/Case:SOT-23 RoHS Compliant: Yes Simple Type: TBD
VISHAY SILICONIX
MOSFET Transistor Polarity:N Channel Drain Source Voltage, Vds:240V Continuous Drain Current, Id:0.3A On-Resistance, Rds(on):4mohm Rds(on) Test Voltage, Vgs:10V Package/Case:TO-92S Drain-Source Breakdown Voltage:240V RoHS Compliant: Yes Simple Type: TBD
VISHAY SILICONIX
MOSFET Transistor Polarity:N Channel Leaded Process Compatible:No Peak Reflow Compatible (260 C):No RoHS Compliant: No Simple Type: TBD
Specifications
Not available
Datasheet
Not available
Do you need an J105-E3? We can help you find it at a competitive price!