RGT Technology, LLC . . .

PRODUCTS-D
Image of VISHAY SILICONIX DG190AP-E3

Details

Part Number DG190AP-E3
Manufacturer VISHAY SILICONIX
Category PRODUCTS-D
Price Request Quote
Lead Time Request Quote

Description

Dual SPDT Analog Switch 30 ohm Side-braze (HOTS) Simple Type: TBD

Request a Quote

* indicates a required field.
Your Contact Information
Your Company/Organization
Your Requirement
By sending us your information, you are affirming your agreement with our Privacy Policy.
You will not receive unsolicited communications.

Related Products

VISHAY SILICONIX
MOSFET Transistor Polarity:P Channel Drain Source Voltage, Vds:-60V Continuous Drain Current, Id:-185mA On-Resistance, Rds(on):60ohm Rds(on) Test Voltage, Vgs:-10V Package/Case:SOT-23 Drain-Source Breakdown Voltage:60V RoHS Compliant: Yes Simple Type: TBD
VISHAY SILICONIX
MOSFET Transistor Polarity:P Channel Drain Source Voltage, Vds:-30V Continuous Drain Current, Id:-385mA On-Resistance, Rds(on):1.4ohm Rds(on) Test Voltage, Vgs:-10V Package/Case:TO-236 Drain Source On Resistance @ 10V:1.4ohm RoHS Compliant: Yes Simple Type: TBD
VISHAY SILICONIX
MOSFET Transistor Polarity:P Channel Drain Source Voltage, Vds:-20V Continuous Drain Current, Id:-580mA On-Resistance, Rds(on):650mohm Rds(on) Test Voltage, Vgs:-4.5V Package/Case:SOT-23 RoHS Compliant: Yes Simple Type: TBD
VISHAY SILICONIX
MOSFET Transistor Polarity:N Channel Drain Source Voltage, Vds:240V Continuous Drain Current, Id:0.3A On-Resistance, Rds(on):4mohm Rds(on) Test Voltage, Vgs:10V Package/Case:TO-92S Drain-Source Breakdown Voltage:240V RoHS Compliant: Yes Simple Type: TBD
VISHAY SILICONIX
MOSFET Transistor Polarity:N Channel Leaded Process Compatible:No Peak Reflow Compatible (260 C):No RoHS Compliant: No Simple Type: TBD

Specifications

Not available

Datasheet

Not available

Do you need an DG190AP-E3? We can help you find it at a competitive price!