VISHAY SILICONIX » 3N163-E3
Details
| Part Number | 3N163-E3 |
|---|---|
| Manufacturer | VISHAY SILICONIX |
| Category | PRODUCTS-3 |
| Price | Request Quote |
| Lead Time | Request Quote |
Description
MOSFET Transistor Polarity:P Channel Continuous Drain Current, Id:-0.05A On-Resistance, Rds(on):250ohm Package/Case:TO-206AF Drain-Source Breakdown Voltage:-40V Gate-Source Voltage:-5V Leaded Process Compatible:Yes RoHS Compliant: Yes Simple Type: TBD
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Specifications
Not available
Datasheet
Not available
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